High-Purity Silicon Carbide Powder
SiC powder is a semiconductor material with excellent electrical conductivity, making it an ideal material for use in electronic devices.
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Description
High-purity silicon carbide (SiC) powder is a synthetic material with a purity level of 99.9% or higher. It is made by synthesizing silicon and carbon at high temperatures to create a highly crystalline material that is extremely hard and durable. High-purity SiC powder is often used in high-tech applications, such as semiconductors, aerospace, and defense, due to its exceptional properties, including:
High thermal conductivity: High-purity SiC powder has a thermal conductivity that is higher than most metals, making it an excellent material for use in high-temperature applications.
High strength and hardness: High-purity SiC powder is extremely hard and has excellent wear resistance, making it ideal for use in applications that require high strength and durability.
High chemical resistance: SiC powder is highly resistant to chemical corrosion and can withstand exposure to a wide range of acids, bases, and other chemicals.
Specification
| Property | Value |
|---|---|
| Purity | ≥99.9% |
| Crystal Structure | Hexagonal (6H-SiC) or Cubic (3C-SiC) |
| Particle Size Distribution | D50: 0.5-5 μm; D90: 5-10 μm; D100: 10-50 μm |
| Specific Surface Area (m2/g) | 5-20 |
| Density (g/cm3) | 3.20-3.22 |
| Color | Black |
| Mohs Hardness Scale | 9.5 |
| Thermal Conductivity (W/mK) | 150-200 |
| Coefficient of Thermal Expansion (10-6/K) | 4.0-4.5 |
High-purity SiC powder is typically available in a range of particle sizes, ranging from submicron to several millimeters in size. It may be packed in sealed containers to protect the powder from contamination and degradation during storage and transportation.
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Suositut Tagit: high-purity silicon carbide powder
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